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www.irf.com 1 parameter maximum units i d @ t a = 25c continuous drain current, v gs @10v 2.7 a i d @ t a = 70c 2.1 i dm pulsed drain current 21 p d @t a = 25c power dissipation 1.25 w p d @t a = 70c 0.8 linear derating factor 10 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt 6.2 v/ns t j, t stg junction and storage temperature range -55 to +150 c IRF7523D1PBF notes: repetitive rating; pulse width limited by maximum junction temperature (see figure 11) i sd 1.7a, di/dt 120a/s, v dd v (br)dss , t j 150c pulse width 300s; duty cycle 2% when mounted on 1 inch square copper board to approximate typical multi-layer pcb thermal resistance parameter maximum units r ja junction-to-ambient 100 c/w absolute maximum ratings (t a = 25c unless otherwise noted) thermal resistance ratings 02/22/05 co-packaged hexfet ? power mosfet and schottky diode n-channel hexfet low v f schottky rectifier generation 5 technology micro8 footprint lead-free fetky mosfet / schottky diode description v dss = 30v r ds(on) = 0.11 ? schottky vf = 0.39v micro8 top view 8 12 3 4 5 6 7 a as g dd k k the fetky family of co-packaged hexfets and schottky diodes offer the designer an innovative board space saving solution for switching regulatorapplications. generation 5 hexfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, pda, etc. the new micro8 package, with half the footprint area of the standard so-8, provides the smallest footprint available in an soic outline. this makes the micro8 an ideal device for applications where printed circuit board space is at a premium. the lowprofile (<1.1mm) of the micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. pd- 95434 downloaded from: http:///
IRF7523D1PBF 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 v v gs = 0v, i d = 250a r ds(on) static drain-to-source on-resistance 0.090 0.130 v gs = 10v, i d = 1.7a 0.140 0.190 v gs = 4.5v, i d = 0.85a v gs(th) gate threshold voltage 1.0 v v ds = v gs , i d = 250a g fs forward transconductance 1.9 s v ds = 10v, i d = 0.85a i dss drain-to-source leakage current 1.0 v ds = 24v, v gs = 0v 25 v ds = 24v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage -100 v gs = -20v gate-to-source reverse leakage 100 v gs = 20v q g total gate charge 7.8 12 i d = 1.7a q gs gate-to-source charge 1.2 1.8 nc v ds = 24v q gd gate-to-drain ("miller") charge 2.5 3.8 v gs = 10v (see figure 10) t d(on) turn-on delay time 4.7 v dd = 15v t r rise time 10 i d = 1.7a t d(off) turn-off delay time 12 r g = 6.1 ? t f fall time 5.3 r d = 8.7 ? c iss input capacitance 210 v gs = 0v c oss output capacitance 80 pf v ds = 25v c rss reverse transfer capacitance 32 ? = 1.0mhz (see figure 9) mosfet electrical characteristics @ t j = 25c (unless otherwise specified) ? a na ns parameter min. typ. max. units conditions i s continuous source current (body diode) 1.25 a i sm pulsed source current (body diode) 21 v sd body diode forward voltage 1.2 v t j = 25c, i s = 1.7a, v gs = 0v t rr reverse recovery time (body diode) 40 60 ns t j = 25c, i f = 1.7a q rr reverse recovery charge 48 72 nc di/dt = 100a/s mosfet source-drain ratings and characteristics

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power mosfet characteristics fig 4. typical source-drain diode forward voltage 0.1 1 10 100 0.1 1 10 20s pulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 0.1 1 10 100 0.1 1 10 a ds v , drain-to-source voltage (v) d i , drain-to-source current (a) 20s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 0.1 1 10 100 3.0 3.5 4.0 4.5 5.0 5.5 6.0 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 10v 20s pulse width ds 0.1 1 10 100 0.4 0.8 1.2 1.6 2. 0 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a downloaded from: http:///
IRF7523D1PBF 4 www.irf.com r ds (on) , drain-to-source on resistance ( ? ) r ds (on) , drain-to-source on resistance ( ? ) power mosfet characteristics fig 8. maximum safe operating area fig 6. typical on-resistance vs. drain current fig 7. typical on-resistance vs. gate voltage fig 5. normalized on-resistance vs. temperature 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 1.7a d 0.1 1 10 100 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a) operation in this area limited by r d ds(on) t = 25c t = 150c single pulse 1ms 10ms a aj 100s 10s

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IRF7523D1PBF www.irf.com 5 power mosfet characteristics

fig 9. maximum effective transient thermal impedance, junction-to-ambient fig 11. maximum effective transient thermal impedance, junction-to-ambient 0 100 200 300 400 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 024681 01 2 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 9 v = 24v v = 15v i = 1.7a dsds d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
IRF7523D1PBF 6 www.irf.com schottky diode characteristics fig. 13 - typical values of reverse current vs. reverse voltage
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+ 6/9 fig. 12 -typical forward voltage drop characteristics 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1 .0 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c jj j
fig.14 - maximum allowable ambient temp. vs. forward current 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 f(av) a average forward current - i (a) allowable ambient temperature - (c ) d = 3/4 d = 1/2 d =1/3 d = 1/4 d = 1/5 dc v = 80% rated r = 100c/w square wave thja r forward voltage drop - v f (v) downloaded from: http:///
IRF7523D1PBF www.irf.com 7 v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f 3
1 0.1 % 3 < 3 + - 3 fig 16a. switching time test circuit fig 16b. switching time waveforms fig 15a. basic gate charge waveform q g q gs q gd v g charge fig 15b. gate charge test circuit d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - downloaded from: http:///
IRF7523D1PBF 8 www.irf.com p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? :
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IRF7523D1PBF www.irf.com 9 micro8 part marking information micro8 package outlinedimensions are shown in milimeters (inches) inches millimeters min max min max a 0.10 (.004) 0.25 (.010) m a m h 1 2 3 4 8 7 6 5 d - b - 3 3 e - a - e 6x e 1 - c - b 8x 0.08 (.003) m c a s b s a 1 l 8x c 8x n otes: 1 dimensioning and tolerancing per ansi y14.5m-1982. 2 controlling dimension : inch. 3 dimensions do not include mold flash. a .036 .044 0.91 1.11 a1 .004 .008 0.10 0.20 b .010 .014 0.25 0.36 c .005 .007 0.13 0.18 d .116 .120 2.95 3.05 e .0256 basic 0.65 basic e1 .0128 basic 0.33 basic e .116 .120 2.95 3.05 h .188 .198 4.78 5.03 l .016 .026 0.41 0.66 0 6 0 6 dim lead assignments single dual d d d d d1 d1 d2 d2 s s s g s1 g1 s2 g2 1 2 3 4 1 2 3 4 8 7 6 5 8 7 6 5 recommended footprint 1.04 ( .041 ) 8x 0.38 ( .015 ) 8x 3.20 ( .126 ) 4.24 ( .167 ) 5.28 ( .208 ) 0.65 ( .0256 ) 6x lot code (xx) example: this is an irf7501 part number p = designates lead - free product (optional) w = we e k y = year dat e code (yw) - s ee table below ww = (1-26) if preceded by las t digit of calendar year year y work we e k w 9 2009 5 2005 2003 2002 20012004 3 2 14 2007 20062008 7 68 2010 0 03 02 0104 c b ad 26 2425 z xy b 2002 b 28 ww = (27-52) if pre ce de d by a let t er year 2001 y a week wor k 27 wa k 2010 f 2006 2004 20032005 d ce 2008 20072009 h gj x 50 30 29 d c 5152 yz downloaded from: http:///
IRF7523D1PBF 10 www.irf.com micro8 tape & reel informationdimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . outline conforms to eia-481 & eia-541. 2 . controlling dimension : millimeter. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/05 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on irs web site. downloaded from: http:///

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